DMP3012LPS_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®5060-8

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) V_GS = -10V
Continuous Drain Current (Note 6) V_GS = -4.5V
Pulsed Drain Current (Notes 6)
Avalanche Current (Notes 7) L = 1mH
Avalanche Energy (Notes 7) L = 1mH
Steady
State
Steady
State
T_A = +25°C
T_A = +70°C
T_A = +25°C
T_A = +70°C
Symbol
V_DSS
V_GSS
I_D
I_D
I_DM
I_AR
E_AR
DMP3012LPS
Value
Unit
-30
V
±20
V
13.2
10.5
A
11.4
9.1
A
-100
A
-24
A
292
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @ T_A = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @ T_A = +25°C (Note 6)
Thermal Resistance, Junction to Case @ T_C = +25°C (Notes 6 )
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
P_D
R_θJA
R_θJC
T_J, T_STG
Value
1.29
97
2.36
53
4.0
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V_GS = -10V)
Total Gate Charge (V_GS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BV_DSS
-30
I_DSS
—
I_GSS
—
V_GS(th)
R_{DS (ON)}
|Y_fs|
V_SD
-1.1
—
—
—
—
C_iss
—
C_oss
—
C_rss
—
R_g
—
Q_g
—
Q_g
—
Q_gs
—
Q_gd
—
t_D(on)
—
t_r
—
t_D(off)
—
t_f
—
Typ
—
—
—
-1.6
7.5
8.5
30
-0.65
6807
988
647
6.2
139
66
19
21
8.9
10.5
254
95
Max
—
-1.0
±100
-2.1
9.0
12.0
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V V_GS = 0V, I_D = -250µA
μA V_DS = -30V, V_GS = 0V
nA V_GS = ±20V, V_DS = 0V
V
V_DS = V_GS, I_D = -250µA
mΩ ^{VGS = -10V, ID = -10A}
V_GS = -4.5V, I_D = -10A
S V_DS = -15V, I_D = -10A
V
V_GS = 0V, I_S = -1A
pF
pF
V_DS = 15V, V_GS = 0V,
f = 1.0MHz
pF
Ω
V_DS = 0V, V_GS = 0V, f = 1MHz
nC
nC
nC
V_DS = -15V, I_D = -10A
nC
ns
ns V_DS = -15V, V_GEN = -10V,
ns R_G = 6Ω, I_D = -1A
ns
POWERDI is a registered trademark of Diodes Incorporated.
DMP3012LPS
Document number: DS35247 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated