DMP25H18DLFDE Datasheet, PDF (2/7 Pages) Diodes Incorporated – Low Gate Threshold Voltage

DMP25H18DLFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
≦ Pulsed Drain Current (10µs pulse, duty cycle 1%)
Maximum Body Diode Continuous Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Value
-250
±40
-0.26
-0.21
-0.8
1.2
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
PD
R_θJA
R_θJC
TJ, TSTG
Value
0.6
1.4
191
86
17
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
Typ
Max
Unit
Test Condition
BVDSS
-250
—
—
V
VGS = 0V, ID = -1mA
IDSS
—
—
-1
µA V_DS = -250V, V_GS = 0V
IGSS
—
—
±100
nA V_GS = ±40V, V_DS = 0V
VGS(th)
-0.5
-1.7
-2.5
10
14
RDS (ON)
—
13
18
VSD
—
-0.8
-1.2
Ciss
—
81
—
Coss
—
14
—
Crss
—
4
—
Rg
—
13
—
Qg
—
2.8
—
Qgs
—
0.3
—
Qgd
—
0.6
—
tD(on)
—
7.5
—
tr
—
25
—
tD(off)
—
124
—
tf
—
95
—
trr
—
85
—
Qrr
—
294
—
V
VDS = VGS, ID = -1mA
Ω
VGS = -10V, ID = -200mA
VGS = -3.5V, ID = -100mA
V
VGS = 0V, IS = -200mA
pF
pF
VDS = -25V, VGS = 0V,
f = 1.0MHz
pF
Ω V_DS = 0V, V_GS = 0V, f = 1MHz
nC
nC V_DS = -25V, I_D = -200mA
nC
ns
ns _{VDS = -30V, ID = -200mA}
ns VGS = -10V, RG = 50Ω
ns
ns
uC ^{IF = -1.0A, di/dt = 100A/µs}
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP25H18DLFDE
Datasheet number: DS37298 Rev. 3 - 2
2 of 7
www.diodes.com
January 2015
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