DMP2070UCB6 Datasheet, PDF (2/6 Pages) Diodes Incorporated – DMP2066LVT-7

Maximum Ratings (@TA = +25°C unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Pulsed Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 5)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
DMP2070UCB6
Value
-20
±8
-2.5
-2.0
-3.5
-2.8
-12
-1.8
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
PD
R_JA
R_JA
TJ, TSTG
Value
0.92
1.47
136
84
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
@TC = +25°C
Symbol Min Typ
BVDSS
-20
-
IDSS
-
-
IGSS
-
-
VGS(th)
-0.4 -0.6
55
70
RDS (ON)
-
90
110
|Yfs|
-
12
VSD
-
-0.7
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
210
-
92
-
38
5.3
-
2.9
-
0.3
-
0.5
-
7.3
-
14.0
-
42.6
-
32
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.
6 300ms pulse, pulse duty cycle ≤ 2%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-
-1
±100
-1.0
70
90
110
150
-
-1
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V V_GS = 0V, I_D = -250μA
μA V_DS = -16V, V_GS = 0V
nA V_GS = ±8V, V_DS = 0V
V V_DS = V_GS, I_D = -250μA
VGS = -4.5V, ID = - 1A
mΩ ^{VGS = -2.5V, ID = -1A}
VGS = -1.8V, ID = -1A
VGS = -1.5V, ID = -1A
S V_DS = -10V, I_D = -1A
V V_GS = 0V, I_S = -1A
pF
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
pF
Ω V_DS = 0V, V_GS = 0V, f = 1MHz
nC
nC ^{VGS = -4.5V, VDS = -10V,}
nC ^{ID = -1A ,}
ns
ns V_DD = -10V, V_GS = -4.5V,
ns I_DS = -1A, R_G = 20Ω,
ns
DMP2070UCB6
Document number: DS35553 Rev. 3 - 2
2 of 6
www.diodes.com
May 2015
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