DMP1022UFDE Datasheet, PDF (2/7 Pages) Diodes Incorporated – 12V P-CHANNEL ENHANCEMENT MODE MOSFET

DMP1022UFDE
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) V_GS = -4.5V
Steady
State
t<5s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)
T_A = +25°C
T_A = +70°C
T_A = +25°C
T_A = +70°C
T_A = +25°C
T_C = +25°C
Symbol
V_DSS
V_GSS
I_D
I_D
I_DM
I_S
I_SM
Value
-12
±8
-9.1
-7.2
-11.2
-9.0
-90
-2.5
-7.1
-50
Units
V
V
A
A
A
A
A
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T_A = +25°C
T_A = +70°C
Steady state
t<5s
T_A = +25°C
T_A = +70°C
Steady state
t<5s
Steady state
Symbol
P_D
R_θJA
P_D
R_θJA
R_θJC
T_J, T_STG
Value
0.66
0.42
189
123
2.03
1.3
61
40
9.3
-55 to +150
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
Units
W
°C/W
W
°C/W
°C
100
10
1
0.1
R_DS(on)
Limited
DC
P_W = 10s
P_W = 1s
P_W = 100ms
P_W = 10ms
P_W = 1ms
P_W = 100µs
P_W = 10µs
0.01
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
100
90
80
70
Single Pulse
R_θJA = 61°C/W
R_θJA(t) = r_(t) * R_θJA
T_J - T_A = P * R_θJA(t)
60
50
40
30
20
10
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
DMP1022UFDE
Datasheet number: DS35477 Rev. 9 - 2
2 of 7
www.diodes.com
July 2012
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