DMNH10H028SPS Datasheet, PDF (2/7 Pages) Diodes Incorporated – 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET

Maximum Ratings (@TC = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS = 10V
Steady
State
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) (Note 5)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8) L=0.1mH
Avalanche Energy (Note 8) L=0.1mH
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMNH10H028SPS
Value
Unit
100
V
±20
V
40
25
A
54
A
3.9
A
26
A
35
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
PD
R_JA
PD
R_JA
R_JC
TJ, TSTG
Value
1.6
97
2.9
52
1.8
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TC = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 6.0V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
100
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
2.5
19
0.7
2245
173
68
1.9
36
22
7.3
9.2
6.4
5.8
17.8
4.8
35
47
Max
—
1.0
±100
4.0
28
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V
VGS = 0V, ID = 250µA
µA V_DS = 100V, V_GS = 0V
nA V_GS = 20V, V_DS = 0V
V
VDS = VGS, ID = 250µA
m V_GS = 10V, I_D = 20A
V
VGS = 0V, IS = 1.0A
pF
VDS = 50V, VGS = 0V
f = 1.0MHz
 V_DS = 0V, V_GS = 0V, f = 1.0MHz
nC V_DD = 50V, I_D = 20A
ns
VGS = 10V, VDS= 50V,
RG = 3.0, ID = 20A
ns I_F = 20A, di/dt = 100A/µs
nC I_F = 20A, di/dt = 100A/µs
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DMNH10H028SPS
Document number: DS38047 Rev. 2 - 2
2 of 7
www.diodes.com
December 2015
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