DMN62D1SFB_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 60V N-CHANNEL ENHANCEMENT MODE MOSFET

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
V_GS = 10V
T_A = +25°C
T_A = +85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
DMN62D1SFB
Value
Unit
60
V
±20
V
0.41
0.30
A
2.64
A
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
@T_A =+25°C
Symbol
P_D
R_θJA
T_J, T_STG
Value
0.47
258
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T_J = +25°C
Gate-Source Leakage
Symbol Min
Typ
Max
BV_DSS
60
I_DSS
—
I_GSS
—
—
—
—
100
—
10
1
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V_GS(th)
1.3
R_DS(ON)
—
|Y_fs|
100
V_SD
—
C_iss
—
C_oss
—
C_rss
—
R_g
—
Q_g
—
Q_g
—
Q_gs
—
Q_gd
—
t_D(on)
—
t_r
—
t_D(off)
—
t_f
—
1.6
—
—
0.7
40
3.5
2.8
81.3
0.73
1.39
0.2
0.23
3.89
4.93
18.80
11.96
2.3
1.40
1.60
—
1.1
80
7
5.6
200
1.5
2.8
0.4
0.5
10
10
40
25
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit
Test Condition
V
V_GS = 0V, I_D = 250μA
nA V_DS = 60V, V_GS = 0V
μA
V_GS = ±20V, V_DS = 0V
V_GS = ±5V, V_DS = 0V
V
V_DS = V_GS, I_D = 250μA
Ω
V_GS = 10V, I_D = 40mA
V_GS = 4.5V, I_D = 35mA
mS V_DS = 5V, I_D = 40mA
V
V_GS = 0V, I_S = 300mA
pF
pF
V_DS = 40V, V_GS = 0V,
f = 1.0MHz
pF
Ω
V_DS = 0V, V_GS = 0V, f = 1MHz
nC V_GS = 4.5V
nC
nC
V_GS = 10V ^{VDS = 50V, ID = 1A}
nC
ns
ns
V_DS = 50V, I_D = 1A
ns VGS = 10V, RG = 6Ω
ns
DMN62D1SFB
Document number: DS35252 Rev. 3 - 2
2 of 6
www.diodes.com
April 2014
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