DMN601TK_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Marking Information
DMN601TK
K7K YM
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2005
S
2006
T
Jan
Feb
1
2
…
…
Mar
3
2014
B
Apr
4
2015
C
May
5
2016
D
Jun
6
2017
E
2018
F
2019
G
Jul
Aug
Sep
Oct
7
8
9
O
2020
H
Nov
N
2021
I
Dec
D
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Characteristic
Continuous
Pulsed (Note 6)
Symbol
VDSS
VGSS
ID
Value
60
±20
300
800
Units
V
V
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
R_JA
TJ, TSTG
Value
150
833
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BVDSS 60 

V V_GS = 0V, I_D = 10µA
IDSS
  1.0 µA V_DS = 60V, V_GS = 0V
IGSS
  ±10 µA V_GS = ±20V, V_DS = 0V
VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA
RDS (ON) 


2.0
3.0
Ω ^{VGS = 10V, ID = 0.5A}
VGS = 5V, ID = 0.05A
|Yfs|
80   ms V_DS =10V, I_D = 0.2A
Ciss
Coss
Crss
  50 pF


25
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
  5.0 pF
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN601TK
Document number: DS30654 Rev. 6 - 2
2 of 6
www.diodes.com
September 2014
© Diodes Incorporated