DMN5L06V Datasheet, PDF (2/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ T_A = 25°C unless otherwise specified
Symbol Min Typ
BV_DSS
50
¾
@ TC = 25°C
@ T_C = 125°C
I_DSS
¾
¾
IGSS
¾
¾
VGS(th) 0.49
¾
R_{DS (ON)}
¾
¾
1.6
2.2
I_D(ON)
0.5
1.0
|Y_fs|
200
¾
VSD
0.5
¾
C_iss
¾
¾
C_oss
¾
¾
C_rss
¾
¾
Max Unit
Test Condition
¾
V VGS = 0V, ID = 10mA
0.1
500
µA VDS = 50V, VGS = 0V
±20 nA VGS = ±20V, VDS = 0V
1.2
V VDS = VGS, ID = 250mA
3
4
W
VGS = 2.7V, ID = 0.2A,
V_GS = 1.8V, I_D = 50mA
¾
A VGS = 10V, VDS = 7.5V
¾
mS VDS =10V, ID = 0.2A
1.4
V VGS = 0V, IS = 115mA
50 pF
25
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
5.0 pF
1.5
V_GS = 10V
8V
6V
5V
1.2
4V
3V
0.9
0.6
8V
10V
5V
6V
4V
3V
0.3
0
0
1
2
3
4
5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1
V_DS = 10V
Pulsed
0.1
T_A = 150°C
T_A = 125°C
0.01
T_A = 85°C
T_A = 25°C
T_A = 0°C
T_A = -25°C
0.001
0
T_A = -55°C
0.5 1 1.5 2 2.5 3 3.5
V_GS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DS30604 Rev. 7 - 2
2 of 4
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