DMN2041L Datasheet, PDF (2/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2041L
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T_J = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol Min
BV_DSS
20
I_DSS
-
I_GSS
-
V_GS(th)
0.5
Static Drain-Source On-Resistance
R_{DS (ON)}
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Y_fs|
-
V_SD
-
C_iss
-
C_oss
-
C_rss
-
R_g
-
Q_g
-
Q_g
-
Q_gs
-
Q_gd
-
t_D(on)
-
t_r
-
t_D(off)
-
t_f
-
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
Typ
-
-
-
-
20
26
6
0.7
550
88
81
1.34
15.6
7.2
1.0
1.9
4.69
13.19
22.10
6.43
Max
-
1.0
±100
1.2
28
41
-
1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V
V_GS = 0V, I_D = 250μA
μA V_DS = 20V, V_GS = 0V
nA V_GS = ±12V, V_DS = 0V
V
V_DS = V_GS, I_D = 250μA
mΩ ^{VGS = 4.5V, ID = 6.0A}
V_GS = 2.5V, I_D = 5.2A
S
V_DS = 10V, I_D = 6A
V
V_GS = 0V, I_S = 1.7A
pF
V_DS = 10V, V_GS = 0V,
f = 1.0MHz
Ω V_DS = 0V, V_GS = 0V, f = 1MHz
nC V_GS = 10V, V_DS = 10V, I_D = 6A
nC V_GS = 4.5V, V_DS = 10V, I_D = 6A
ns
V_DD = 10V, V_GEN = 4.5V,
R_GEN = 1Ω, I_D = 6.7A
20
V_GS = 10V
16
V_GS = 4.5V
V_GS = 3.0V
V_GS = 2.5V
12
V_GS = 2.0V
8
4
V_GS = 1.5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
20
V_DS = 5V
16
12
8
T_A = 150°C
4
T_A = 125°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0
0 0.5
1
1.5
2
2.5
3
V_GS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMN2041L
Document number: DS31962 Rev. 1 - 2
2 of 6
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September 2009
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