DMN2028UFDH Datasheet, PDF (2/6 Pages) Diodes Incorporated – Low On-Resistance

DMN2028UFDH
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage (Note 5)
Characteristic
Continuous Drain Current (Note 7) V_GS = 10V
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
Steady
State
t<10s
T_A = +25°C
T_A = +70°C
T_A = +25°C
T_A = +70°C
Symbol
V_DSS
V_GSS
I_D
I_D
I_S
I_DM
Value
20
±12
6.8
5.8
8.8
7.0
2
40
Units
V
V
A
A
A
A
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
P_D
R_θJA
P_D
R_θJA
R_θJC
T_J, T_STG
Value
1.1
118
72
1.5
82
50
14
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T_J = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BV_DSS
20
I_DSS
—
I_GSS
—
V_GS(th)
0.5
R_{DS (ON)}
—
|Y_fs|
—
V_SD
—
C_iss
—
C_oss
—
C_rss
—
R_g
—
Q_g
—
Q_gs
—
Q_gd
—
t_D(on)
—
t_r
—
t_D(off)
—
t_f
—
Typ Max
—
—
—
1
—
±10
—
1
16
20
17
22
19
26
24
36
8
—
0.7
1.0
151
—
91
—
32
—
200
—
8.5
—
1.6
—
2.8
—
53
—
77
—
561
—
234
—
Unit
Test Condition
V
V_GS = 0V, I_D = 250μA
µA V_DS = 20V, V_GS = 0V
µA V_GS = ±10V, V_DS = 0V
V
V_DS = V_GS, I_D = 250μA
V_GS = 10V, I_D = 4A
mΩ ^{VGS = 4.5V, ID = 4A}
V_GS = 2.5V, I_D = 4A
V_GS = 1.8V, I_D = 4A
S
V_DS = 5V, I_D = 12A
V
V_GS = 0V, I_S = 5A
pF
pF
V_DS = 10V, V_GS = 0V,
f = 1.0MHz
pF
Ω V_DS = 0V, V_GS = 0V, f = 1MHz
nC
nC ^{VGS = 4.5V, VDS = 10V,}
nC ^{ID = 6.5A}
ns
ns V_GS = 10V, V_DS = 4.5V,
ns R_G = 6Ω, R_L = 1.0 Ω, I_D = 1A
ns
Notes:
5. AEC-Q101 V_GS maximum is ±9.6V.
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMN2028UFDH
Document number: DS35805 Rev. 5 - 2
2 of 6
www.diodes.com
January 2013
© Diodes Incorporated