DMG6601LVT_15 Datasheet, PDF (2/9 Pages) Diodes Incorporated – COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Maximum Ratings - Q1 and Q2 (@T_A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Q1
Drain-Source Voltage
V_DSS
30
Gate-Source Voltage
V_GSS
±12
Continuous Drain Current (Note 6) V_GS = 10V
Steady
State
t<10s
T_A = +25°C
T_A = +70°C
T_A = +25°C
T_A = +70°C
I_D
I_D
3.8
3.0
4.5
3.4
Maximum Body Diode Forward Current (Note 6)
I_S
1.5
Pulsed Drain Current (Note 6)
I_DM
20
DMG6601LVT
Q2
Units
-30
V
±12
V
-2.5
-2
A
-3
-2.3
A
-1.5
A
-15
A
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T_A = +25°C
T_A = +70°C
Steady state
t<10s
T_A = +25°C
T_A = +70°C
Steady state
t<10s
Symbol
P_D
R_JA
P_D
R_JA
R_JC
T_J, T_STG
Value
0.85
0.54
147
103
1.3
0.83
96
67
36
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics - Q1 (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @T_J = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V_GS = 4.5V)
Total Gate Charge (V_GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(th)
R_{DS (ON)}
|Y_fs|
V_SD
C_iss
C_oss
C_rss
R_g
Q_g
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
Min
30
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
-
-
-
1
-
±100
1
1.5
34
55
38
65
49
85
6
-
0.75
1.0
422
-
41
-
39
-
1.26
-
5.4
-
12.3
-
0.8
-
1.2
-
1.6
-
7.4
-
31.2
-
15.6
-
Unit
Test Condition
V
V_GS = 0V, I_D = 250μA
μA V_DS = 30V, V_GS = 0V
nA V_GS = ±12V, V_DS = 0V
V
V_DS = V_GS, I_D = 250μA
V_GS = 10V, I_D = 3.4A
mΩ V_GS = 4.5V, I_D = 3A
V_GS = 2.5V, I_D = 2A
S
V_DS = 5V, I_D = 3.4A
V
V_GS = 0V, I_S = 1A
pF
pF
pF
V_DS = 15V, V_GS = 0V,
f = 1.0MHz
Ω
V_DS = 0V, V_GS = 0V, f = 1.0MHz
nC
nC V_GS = 10V, V_DS = 15V,
nC I_D = 3.1A
nC
ns
ns V_DS = 15V, V_GS = 10V,
ns R_L = 4.7Ω, R_G =3Ω,
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
2 of 9
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August 2013
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