DMG3418L_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMG3418L
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Characteristic
Drain Current (Note 6)
T_A = +25°C
T_A = +70°C
Pulsed
Symbol
V_DSS
V_GSS
I_D
I_DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
T_A = +25°C
T_A = +70°C
Thermal Resistance, Junction to Ambient @T_A = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
30
±12
4.0
3.1
15
Value
1.4
0.9
90
-55 to +150
Unit
V
V
A
A
Unit
W
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol Min
BV_DSS
30
I_DSS
⎯
I_GSS
⎯
V_GS(th)
0.5
Static Drain-Source On-Resistance
⎯
R_DS(ON)
⎯
⎯
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V_SD
⎯
C_iss
⎯
C_oss
⎯
C_rss
⎯
Q_g
⎯
Q_gs
⎯
Q_gd
⎯
t_D(on)
⎯
t_r
⎯
t_D(off)
⎯
t_f
⎯
Notes:
5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Typ
Max
⎯
⎯
⎯
1
⎯
±100
⎯
1.5
25
60
30
70
50
150
⎯
1.2
464.3
⎯
49.5
⎯
43.8
⎯
5.5
⎯
1.1
⎯
1.8
⎯
1.9
⎯
1.6
⎯
10.3
⎯
2.0
⎯
Unit
Test Condition
V V_GS = 0V, I_D = 250µA
µA V_DS = 30V, V_GS = 0V
nA V_GS = ±12V, V_DS = 0V
V V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 4A
mΩ V_GS = 4.5V, I_D = 3A
V_GS = 2.5V, I_D = 2A
V V_GS = 0V, I_S = 2.0A
pF
pF
V_DS = 15V, V_GS = 0V
f = 1.0MHz
pF
nC ^{VGS = 4.5V, VDS = 15V,}
I_D = 4A
ns
ns _{VDD = 15V, VGEN = 10V,}
ns RGEN = 3Ω, RL = 3.75Ω
ns
DMG3418L
Document number: DS36366 Rev. 3 - 2
2 of 5
www.diodes.com
March 2014
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