DMG302PU Datasheet, PDF (2/6 Pages) Diodes Incorporated – Low On-Resistance

DMG302PU
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) V_GS = -4.5V
Continuous Drain Current (Note 6) V_GS = -2.7V
Pulsed Drain Current T_P ≤ 300µs, Duty Cycle = 2%)
Steady
State
Steady
State
T_A = +25°C
T_A = +70°C
T_A = +25°C
T_A = +70°C
Symbol
V_DSS
V_GSS
I_D
I_D
I_DM
Value
-25
-8
-0.17
-0.14
-0.15
-0.12
-0.5
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
P_D
R_θJA
R_θJC
T_J, T_STG
Value
0.33
0.45
376
275
81
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min
BV_DSS
-25
I_DSS
⎯
I_GSS
⎯
V_GS(th)
R_DS(ON)
-0.65
⎯
⎯
Typ
⎯
⎯
⎯
-0.96
2.5
3
Max
⎯
-1
-100
-1.5
10
13
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
|Y_fs|
⎯
189
⎯
V_SD
⎯
⎯
-1.5
C_iss
⎯
27.2
⎯
C_oss
⎯
6.1
⎯
C_rss
⎯
1.7
⎯
Q_g
⎯
0.35
⎯
Q_gs
⎯
0.08
⎯
Q_gd
⎯
0.06
⎯
t_d(on)
⎯
4.5
⎯
t_r
⎯
2.3
⎯
t_d(off)
⎯
24.1
⎯
t_f
⎯
11.0
⎯
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit
Test Condition
V V_GS = 0V, I_D = -250µA
µA V_DS = -20V, V_GS = 0V
nA V_GS = -8V, V_DS = 0V
V
V_DS = V_GS, I_D = -250µA
Ω
V_GS = -4.5V, I_D = -0.2A
V_GS = -2.7V, I_D = -0.05A
ms V_DS = -5V, I_D = -0.2A
V V_GS = 0V, I_S = -0.2A
pF
V_DS = -10V, V_GS = 0V
f = 1.0MHz
nC ^{VDS = -5V, ID = -0.2A,}
V_GS = -4.5V,
ns
V_GS = -4.5V, V_DD = -6V
I_D = -0.2A, R_G = 50Ω
DMG302PU
Document number: DS36227 Rev. 2 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated