DMC3032LSD_14 Datasheet, PDF (2/9 Pages) Diodes Incorporated – COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

DMC3032LSD
Marking Information
8
5
C3032LD
YY WW
1
4
Chengdu A/T Site
8
5
C3032LD
YY WW
1
4
Shanghai A/T Site
= Manufacturer’s Marking
C3032LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Maximum Ratings N-CHANNEL – Q1 @T_A = +25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
30
V
Gate-Source Voltage
V_GSS
±20
V
Continuous Drain Current (Note 5)
Steady
State
T_A = +25°C
T_A = +85°C
I_D
8.1
5.1
A
Pulsed Drain Current (Note 6)
I_DM
25
A
Maximum Ratings P-CHANNEL – Q2 @T_A = +25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
-30
V
Gate-Source Voltage
V_GSS
±20
V
Continuous Drain Current (Note 5)
Steady
State
T_A = +25°C
T_A = +85°C
I_D
-7.0
-4.5
A
Pulsed Drain Current (Note 6)
I_DM
-25
A
Thermal Characteristics @T_A = +25°C unless otherwise specified
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Symbol
P_D
R_θJA
T_J, T_STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
2 of 9
www.diodes.com
July 2014
© Diodes Incorporated