DFLS1200Q_15 Datasheet, PDF (2/4 Pages) Diodes Incorporated – 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_F(AV)
I_FSM
DFLS1200Q
Value
Unit
200
V
141
V
1.0
A
40
A
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Ambient (Note 6)
Thermal Resistance Junction to Soldering Point (Note 7)
Operating and Storage Temperature Range
Symbol
R_θJA
R_θJS
T_J, T_STG
Typ
Max
132


7
-55 to +150
Unit
°C/W
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 8)
Forward Voltage
Leakage Current (Note 8)
Total Capacitance
Symbol Min
Typ
Max
Unit
Test Condition
V_(BR)R
200


V I_R = 8μA
V_F


0.85
V I_F = 1.0A
I_R


100
μA V_R = 200V, T_A = +25°C
C_T

23

pF V_R = 5VDC, f = 1MHz
Notes:
6. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf. T_A = +25°C
7. Theoretical R_θJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction.
8. Short duration pulse test used to minimize self-heating effect.
10
1
0.1
0.01
0.001
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1, Typical Forward Characteristics
0 20 40 60 80 100 120 140 160 180 200
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2, Typical Reverse Characteristics
PowerDI is a registered trademark of Diodes Incorporated.
DFLS1200Q
Document number: DS37057 Rev. 1 - 2
2 of 4
www.diodes.com
March 2014
© Diodes Incorporated