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DDTC123JLP_09 Datasheet, PDF (2/7 Pages) Diodes Incorporated – PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
P/N
Symbol Min
Typ
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
50
⎯
Collector-Emitter Breakdown Voltage *
V(BR)CEO
50
⎯
Emitter-Base Breakdown Voltage *
V(BR)EBO
4.5
⎯
Collector Cutoff Current *
ICEX
⎯
⎯
Base Cutoff Current (IBEX)
IBL
⎯
⎯
Collector-Base Cut Off Current
ICBO
⎯
⎯
Collector-Emitter Cut Off Current, IO(OFF)
ICEO
⎯
⎯
Emitter-Base Cut Off Current
IEBO
⎯
⎯
Input-Off Voltage
On Characteristics (Note 4)
VI(OFF)
⎯
⎯
DDTC123JLP
⎯
⎯
Base-Emitter Turn-On Voltage*
DDTC143ZLP VBE(ON)
⎯
⎯
DDTC114YLP
⎯
⎯
DDTC123JLP
⎯
⎯
Base-Emitter Saturation Voltage*
DDTC143ZLP VBE(SAT)
⎯
⎯
DDTC114YLP
⎯
⎯
Input-On Voltage
VI(ON)
1.1
⎯
DDTC123JLP
⎯
⎯
Input Current
DDTC143ZLP
II
DDTC114YLP
⎯
⎯
⎯
⎯
50
⎯
70
⎯
DC Current Gain
hFE
125
⎯
150
⎯
180
⎯
Collector-Emitter Saturation Voltage
⎯
⎯
VCE(SAT)
⎯
⎯
Output On Voltage (Same as VCE(SAT))
Input Resistor +/-30%
VO(ON)
⎯
⎯
ΔR1
-30
⎯
Resistor Ratio
Δ (R2/R1) -20
⎯
Small Signal Characteristics
Transition Frequency (gain bandwidth product)
fT
⎯
250
*Guaranteed by design
Notes:
4. Short duration pulse test used to minimize self-heating effect.
Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
DDTCxxxxLP (R1≠R2 Series)
Max
⎯
⎯
⎯
0.5
0.5
0.5
0.5
0.5
0.5
0.85
0.85
0.95
0.98
0.998
0.98
⎯
7.2
1.5
7.2
⎯
⎯
⎯
⎯
⎯
0.15
0.2
0.3
30
-20
⎯
Unit
Test Condition
V IC = 10μA, IE = 0
V IC = 2mA, IB = 0
V IE = 50μA, IC = 0
μA VCE = 50V, VEB(OFF) = 3.0V
μA VCE = 50V, VEB(OFF) = 3.0V
μA VCB = 50V, IE = 0
μA VCE = 50V, IB = 0
mA VEB = 5V, IC = 0
V VCE = 5V, IC = 100μA
V VCE = 5V, IC = 2mA
V IC = 10mA, IB = 1mA, VCE=5V
V VO = 0.3V, IC = 5mA
mA VI = 5V
⎯ VCE = 5V, IC = 1mA
⎯ VCE = 5V, IC = 2mA
⎯ VCE = 5V, IC = 5mA
⎯ VCE = 5V, IC = 10mA
⎯ VCE = 5V, IC = 50mA
V IC = 10mA, IB = 1mA
V IC = 50mA, IB = 5mA
IJ = 2.5mA, IO = 50mA
%⎯
%⎯
MHz VCE = 10V, IE = 5mA, f = 100MHz
Typical Characteristics Curves
300
@TA = 25°C unless otherwise specified
250
200
150
100
50
RθJA = 500°C/W
0
0 25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
(Note 3)
DDTCxxxxLP (R1≠R2 Series)
Document number: DS30755 Rev. 7 - 2
2 of 7
www.diodes.com
March 2009
© Diodes Incorporated
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