DDTC114GE_2 Datasheet, PDF (2/3 Pages) Diodes Incorporated – NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol Min
Typ
Max
BV_CBO
50
⎯
⎯
BV_CEO
50
⎯
⎯
Unit
V
V
Emitter-Base Breakdown Voltage
BV_EBO
5
⎯
⎯
V
Collector Cutoff Current
Emitter Cutoff Current
DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE
Bleeder Resistor (R₂) Tolerance
Gain-Bandwidth Product*
I_CBO
⎯
⎯
0.5
300
580
I_EBO
140
65
⎯
260
130
30
58
V_CE(sat)
⎯
⎯
0.3
30
h_FE
56
68
⎯
⎯
82
ΔR₂
-30
⎯
+30
f_T
⎯
250
⎯
μA
μA
V
⎯
%
MHz
* Transistor – For Reference Only
250
TYPICAL CURVES – DDTC114GE
1
I_C/I_B = 10
Test Condition
I_C = 50μA
I_C = 1mA
I_E = 720μA, DDTC114GE
I_E = 330 μA, DDTC124GE
I_E = 160 μA, DDTC144GE
I_E = 72 μA, DDTC115GE
V_CB = 50V
V_EB = 4V
I_C = 10mA, I_B = 0.5mA
I_C = 5mA, V_CE = 5V
⎯
V_CE = 10V, I_E = -5mA, f = 100MHz
200
150
100
0.1
0.01
25°C
75°C
-25°C
50
0
-50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
1,000
V_CE = 10
0.001
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Fig. 2 V_CE(SAT) vs. I_C
5
I_E = 0mA
4
3
100
2
1
10
1
10
I_C, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
DS30316 Rev. 8 – 2
0
100
0
2 of 3
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5
10
15
20
25
30
V_R, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
DDTC (R2-ONLY SERIES) E
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