DDTC114GE_1 Datasheet, PDF (2/4 Pages) Diodes Incorporated – NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR

Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE
Bleeder Resistor (R₂) Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
Symbol
BV_CBO
BV_CEO
BV_EBO
ICBO
I_EBO
VCE(sat)
h_FE
DR2
f_T
Min Typ Max Unit
Test Condition
50
¾
¾ V IC = 50mA
50
¾
¾ V IC = 1mA
IE = 720mA, DDTC114GE
5
¾
¾
V
I_E = 330mA, DDTC124GE
IE = 160mA, DDTC144GE
I_E = 72mA, DDTC115GE
¾
¾
0.5 mA VCB = 50V
300
580
140
65
¾
260
130
mA
VEB = 4V
30
58
¾
¾ 0.3 V IC = 10mA, IB = 0.5mA
30
56
68
¾
¾ ¾ IC = 5mA, VCE = 5V
82
-30
¾ +30 %
¾
¾
250
¾
MHz
V_CE = 10V, I_E = -5mA,
f = 100MHz
Ordering Information ^{(Note 3)}
Device
DDTC1xxGE-7-F
DDTC1xxGE-13-F
Packaging
SOT-523
SOT-523
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Shipping
3000/Tape & Reel
10,000/Tape & Reel
Marking Information
XXXYM
XXX = Product Type Marking Code (See Page 1, e.g. N26 = DDTC114GE)
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2002
N
2003
P
2004
R
2005
S
Jan
Feb March Apr
May
Jun
1
2
3
4
5
6
2006
T
2007
U
Jul Aug Sep
7
8
9
2008
V
2009
W
Oct
Nov Dec
O
N
D
DS30316 Rev. 7 - 2
2 of 4
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