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DDTC114ELP Datasheet, PDF (2/5 Pages) Diodes Incorporated – PRE-BIASED (R1 = R2) SMALL SIGNALSURFACE MOUNT 100mA NPN TRANSISTOR
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
50
Collector-Emitter Breakdown Voltage
V(BR)CEO
50
Emitter-Base Breakdown Voltage*
V(BR)EBO
5
Collector Cutoff Current*
ICEX
⎯
Base Cutoff Current (IBEX)
IBL
⎯
Collector-Base Cut Off Current
ICBO
⎯
Collector-Emitter Cut Off Current, IO(OFF)
ICEO
⎯
Emitter-Base Cut Off Current
IEBO
⎯
Input Off Voltage
VI(OFF)
⎯
On Characteristics (Note 4)
10
15
DC Current Gain
hFE
60
100
90
⎯
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
⎯
Base-Emitter Turn-On Voltage*
⎯
VBE(ON)
⎯
Base-Emitter Saturation Voltage*
⎯
VBE(SAT)
⎯
Input-On Voltage
VI(ON)
2.5
Input Current
II
⎯
Output On Voltage (Same as VCE(SAT))
VO(ON)
⎯
Input Resistance
R1
7
Resistance Ratio
(R2/R1)
0.8
Small Signal Characteristics
Current Gain-Bandwidth Product
fT
⎯
* Guaranteed by design.
Note: 4. Short duration test pulse used to minimize self-heating effect.
Pulse Test: Pulse width tp<300 us, Duty Cycle, d<=2%.
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.16
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.6
⎯
⎯
10
1
250
Max
⎯
⎯
⎯
0.5
0.5
0.5
1
0.4
0.5
⎯
⎯
⎯
⎯
⎯
0.15
0.2
0.25
0.25
0.3
0.85
0.95
0.98
1.2
⎯
0.88
0.3
13
1.2
⎯
Unit Test Condition
V IC = 10μA, IE = 0
V IC = 1.0mA, IBB = 0
V IE = 50μA, IC = 0
μA VCE = 50V, VEB(OFF) = 3.0V
μA VCE = 50V, VEB(OFF) = 3.0V
μA VCB = 50V, IE = 0
μA VCB = 50V, IBB = 0
mA VEB = 4V, IC = 0
V VCC = 5V, IO = 100uA
⎯ VCE = 5V, IC = 1mA
⎯ VCE = 5V, IC = 2mA
⎯ VCE = 5V, IC = 10mA
⎯ VCE = 5V, IC = 50mA
⎯ VCE = 5V, IC = 70mA
V IC = 10mA, IBB = 1mA
V IC = 50mA, IBB = 5mA
V IC = 50mA, IBB = 2.5mA
V IC = 50mA, IBB = 10mA
V IC = 70mA, IBB = 10mA
V VCE = 5V, IC = 2mA
V VCE = 5V, IC = 10mA
V IC = 10mA, IBB = 1mA, VCE = 5V
V IC = 50mA, IBB = 5mA, VCE = 5V
V VO = 0.3V, IO = 50mA
mA VI = 5V
V II = 2.5mA, IO = 50mA
KΩ
⎯
⎯
⎯
MHz VCE = 10V, IE = 5mA, f = 1MHz
DS30945 Rev. 4 - 2
2 of 5
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DDTC114ELP
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