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DDTC113TUA_2 Datasheet, PDF (2/3 Pages) Diodes Incorporated – NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R1) Tolerance
Gain-Bandwidth Product*
*Transistor - For Reference Only
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
ΔR1
fT
Min Typ Max Unit
Test Condition
50
⎯ ⎯ V IC = 50μA
50
⎯ ⎯ V IC = 1mA
5
⎯ ⎯ V IE = 50μA
⎯
⎯ 0.5 μA VCB = 50V
⎯
⎯ 0.5 μA VEB = 4V
IC/IB = 10mA/1mA DDTC113TUA
IC/IB = 5mA/0.5mA DDTC123TUA
IC/IB = 2.5mA/.25mA DDTC143TUA
⎯
⎯
0.3
V IC/IB = 1mA/.1mA DDTC114TUA
IC/IB = 5mA/0.5mA DDTC124TUA
IC/IB = 2.5mA/.25mA DDTC144TUA
IC/IB = 1mA/0.1mA DDTC115TUA
IC/IB = .5mA/.05mA DDTC125TUA
100 250 600 ⎯ IC = 1mA, VCE = 5V
-30
⎯ +30 %
⎯
⎯
250
⎯
MHz
VCE = 10V, IE = -5mA,
f = 100MHz
Typical Curves – DDTC114TUA
250
1
IC/IB = 10
200
150
100
50
0.1
0.01
75°C
25°C
-25°C
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
1,000
100
10
0.001
0
4
3
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
IE = 0mA
2
1
1
1
DS30323 Rev. 7 – 2
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
0
100
0
2 of 3
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5
10
15
20
25
30
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
DDTC (R1-ONLY SERIES) UA
© Diodes Incorporated