DDTC113TE_2 Datasheet, PDF (2/4 Pages) Diodes Incorporated – NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
Min
50
50
5
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
0.5
0.5
Collector-Emitter Saturation Voltage
V_CE(sat)
⎯
⎯
0.3
DC Current Transfer Ratio
Input Resistor (R₁) Tolerance
Gain-Bandwidth Product*
* Transistor – For Reference Only
h_FE
100
250
600
ΔR₁
-30
⎯
+30
f_T
⎯
250
⎯
Unit
V
V
V
μA
μA
V
⎯
%
MHz
Test Condition
I_C = 50mA
I_C = 1mA
I_E = 50μA
V_CB = 50V
V_EB = 4V
I_C/I_B = 10mA/1mA DDTC113TE
I_C/I_B = 5mA/0.5mA DDTC123TE
I_C/I_B = 2.5mA/.25mA DDTC143TE
I_C/I_B = 1mA/.1mA DDTC114TE
I_C/I_B = 5mA/0.5mA DDTC124TE
I_C/I_B = 2.5mA/.25mA DDTC144TE
I_C/I_B = 1mA/0.1mA DDTC115TE
I_C/I_B = .5mA/.05mA DDTC125TE
I_C = 1mA, V_CE = 5V
⎯
V_CE = 10V, I_E = -5mA, f = 100MHz
DS30315 Rev. 6 – 2
2 of 4
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