DDTB122LU_2 Datasheet, PDF (2/3 Pages) Diodes Incorporated – PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
R1, R2 Types
Input Voltage
Characteristic
DDTB122LU
DDTB142JU
DDTB122LU
DDTB142JU
Symbol
V_l(off)
V_l(on)
Min Typ Max Unit
Test Condition
-0.3
-0.3
⎯
⎯
V V_CC = -5V, I_O = -100μA
⎯
⎯
-2.0
-2.0
V ^{VO = -0.3V, IO = -20mA}
V_O = -0.3V, I_O = -20mA
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
DDTB122LU
DDTB142JU
DDTB122LU
DDTB142JU
V_O(on)
I_l
I_O(off)
G_l
f_T
⎯
⎯ -0.3V V I_O/I_l = -50mA/-2.5mA
⎯
⎯
-28
-13
mA V_I = -5V
⎯
⎯ -0.5 μA V_CC = -50V, V_I = 0V
56
56
⎯
⎯ ⎯ V_O = -5V, I_O = -50mA
⎯
200 ⎯ MHz V_CE = -10V, I_E = -5mA, f = 100MHz
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DDTB122TU
DDTB142TU
Collector Cutoff Current
Emitter Cutoff Current
DDTB122TU
DDTB142TU
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
DDTB122TU
DDTB142TU
* Transistor - For Reference Only
@T_A = 25°C unless otherwise specified
R1 – Only Types
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
f_T
Min
Typ Max Unit
Test Condition
-50
⎯
⎯
V I_C = -50μA
-40
⎯
⎯
V I_C = -1mA
-5
⎯
⎯
V ^{IE = -50μA}
I_E = -50μA
⎯
⎯
-0.5 μA V_CB = -50V
⎯
⎯
⎯
-0.5
-0.5
μA V_EB = -4V
⎯
⎯ -0.3 V I_C = -50mA, I_B = -2.5mA
100
100
250
250
600
600
⎯ I_C = -5mA, V_CE = -5V
⎯
200
⎯ MHz V_CE = -10V, I_E = 5mA, f = 100MHz
DS30400 Rev. 6 - 2
2 of 3
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