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DDTB113EC Datasheet, PDF (2/3 Pages) Diodes Incorporated – PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR
◁
Electrical Characteristics @ TA = 25°C unless otherwise specified
R1, R2 Types
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
DDTB113EC
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
DDTB113EC
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
DDTB113EC
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
DDTB113EC
DDTB123EC
DDTB143EC
DDTB114EC
DDTB122JC
DDTB113ZC
DDTB123YC
DDTB133HC
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
-0.5
-0.5
-0.5
-0.5
-0.5
¾
¾
V VCC = -5V, IO = -100mA
-0.3
-0.3
-0.3
-3.0
VO = -0.3V, IO = -20mA
-3.0
VO = -0.3V, IO = -20mA
-3.0
VO = -0.3V, IO = -20mA
¾
¾
-3.0
-3.0
V
VO = -0.3V, IO = -10mA
VO = -0.3V, IO = -30mA
-2.0
VO = -0.3V, IO = -20mA
-2.0
VO = -0.3V, IO = -20mA
-2.0
VO = -0.3V, IO = -20mA
¾
¾ -0.3V V IO/Il = -50mA/-2.5mA
-7.2
-3.8
-1.8
¾
¾
-0.88
-28
mA
VI = -5V
-7.2
-3.6
-2.4
¾
¾ -0.5 mA VCC = -50V, VI = 0V
33
39
47
56
47
¾
¾ ¾ VO = -5V, IO = -50mA
56
56
56
¾
200
¾
MHz
VCE = -10V, IE = -5mA,
f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics @ TA = 25°C unless otherwise specified
R1-Only, R2-Only Types
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DDTB123TC
DDTB143TC
DDTB114TC
DDTB114GC
Collector Cutoff Current
Emitter Cutoff Current
DDTB123TC
DDTB143TC
DDTB114TC
DDTB114GC
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
DDTB123TC
DDTB143TC
DDTB114TC
DDTB114GC
Gain-Bandwidth Product*
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Min
-50
-40
-5
¾
¾
¾
¾
-300
¾
100
100
100
56
¾
Typ Max Unit
Test Condition
¾
¾ V IC = -50mA
¾
¾ V IC = -1mA
IE = -50mA
¾
¾
V
IE = -50mA
IE = -50mA
IE = -720mA
¾ -0.5 mA VCB = -50V
-0.5
¾
-0.5
-0.5
mA
VEB = -4V
-580
¾ -0.3 V IC = -50mA, IB = -2.5mA
250 600
250
250
600
600
¾
IC = -5mA, VCE = -5V
¾
¾
200
¾
MHz
VCE = -10V, IE = 5mA,
f = 100MHz
* Transistor - For Reference Only
DS30385 Rev. 6 - 2
2 of 3
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