DDTA144ELP_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – PNP PRE-BIASED (R1=R2) SMALL SIGNAL TRANSISTOR IN DFN1006

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Supply Voltage
Input Voltage
Output Current (Io)
Characteristic
Symbol
VCC
VIN
IC(MAX)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Deration above +25°C
Thermal Resistance, Junction to Ambient Air (Note 5)
(Equivalent to one heated junction of PNP)
Operating and Storage Temperature Range
Symbol
PD
Pder
R_JA
TJ, TSTG
DDTA144ELP
Value
Unit
-50
V
+10 to -40
V
-200
mA
Value
250
2
500
-55 to +150
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Off Characteristics (Notes 6 & 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current (IBEX)
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, IO(off)
Emitter-Base Cut Off Current
Input Off Voltage
On Characteristics (Notes 6 & 7)
Input-On Voltage
Input Current
DC Current Gain
Output On Voltage
(Collector-Emitter Saturation Voltage)
Input Resistance
Resistance Ratio
Small Signal Characteristics
Current Gain-Bandwidth Product
Symbol
Min
Typ
Max Unit
Test Condition
BVCBO
-50


V I_C = -10µA, I_E = 0
BVCEO
-50


V I_C = -1mA, I_B = 0
BVEBO
-4.5


V I_E = -100µA, I_C = 0
ICEX


-100
nA V_CE = -50V, V_EB(OFF) = 3V
IBL


-60
µA V_CE = -50V, V_EB(OFF) = 3V
ICBO


-100
nA V_CB = -50V, I_E = 0
ICES


-100
nA V_CE = -50V, I_B = 0
IEBO


-100
µA V_EB = -4V, I_C = 0
VI(off)
-300


mV V_CC = -5V, I_O = -100uA
VI(on)


-3
V V_O = -0.3V, I_O = -5mA
II


-180
µA V_I = -5V
90


 V_CE =-5V, I_C = -2.5mA
120


 V_CE = -5V, I_C = -5mA
hFE
150


 V_CE = -5V, I_C = -10mA
100


 V_CE = -5V, I_C = -100mA
180


 V_CE = -5V, I_C = -200mA
250


 V_CE = -5V, I_C = -300mA
VO(on)



-150 mV I_I = -1mA, I_O = -10mA

-800 mV I_I = -1mA, I_O = -40mA
R1
33
47
61
kΩ

(R2/R1)
0.8
1
1.2


fT

250

MHz V_CE = -10V, I_E = -5mA, f = 100 MHz
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
7. Guaranteed by design.
DDTA144ELP
Document number: DS30844 Rev. 7 - 2
2 of 5
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May 2015
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