DDTA114GKA_2 Datasheet, PDF (2/3 Pages) Diodes Incorporated – PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
@T_A = 25°C unless otherwise specified
Symbol
BV_CBO
BV_CEO
Min
Typ
-50
⎯
-50
⎯
Emitter-Base Breakdown Voltage
BV_EBO
5
⎯
Collector Cutoff Current
DDTA114GKA
Emitter Cutoff Current
DDTA124GKA
DDTA144GKA
DDTA115GKA
Collector-Emitter Saturation Voltage
DDTA114GKA
DC Current Transfer Ratio
DDTA124GKA
DDTA144GKA
DDTA115GKA
Bleeder Resistor (R₂) Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
I_CBO
I_EBO
V_CE(sat)
h_FE
ΔR₂
f_T
⎯
⎯
-300
-140
-65
⎯
-30
⎯
⎯
30
56
68
⎯
82
-30
⎯
⎯
250
Max
⎯
⎯
⎯
-0.5
-580
-260
-130
-58
-0.3
Unit
Test Condition
V I_C = -50μA
V I_C = -1mA
I_E = -720μA, DDTA114GKA
V ^{IE = -330μA, DDTA124GKA}
I_E = -160μA, DDTA144GKA
I_E = -72μA, DDTA115GKA
μA V_CB = -50V
μA V_EB = -4V
V I_C = -10mA, I_B = -0.5mA
⎯ ⎯ I_C = -5mA, V_CE = -5V
+30 %
⎯
⎯ MHz V_CE = -10V, I_E = 5mA, f = 100MHz
Typical Curves – DDTA114KA
250
1
I_C/I_B = 10
200
150
75°C
0.1
-25°C
25°C
100
0.01
50
0
-50
1,000
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
0.001
0
12
10
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Fig. 2 V_CE(SAT) vs. I_C
f = 1MHz
8
100
6
4
2
10
1
DS30344 Rev. 8 - 2
10
I_C, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
0
100
0
2 of 3
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5
10
15
20
25
30
V_R, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
DDTA (R2-ONLY SERIES) KA
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