DDTA114GE_2 Datasheet, PDF (2/5 Pages) Diodes Incorporated – PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Bleeder Resistor (R₂) Tolerance
DDTA114GE
DDTA124GE
DDTA144GE
DDTA115GE
DDTA114GE
DDTA124GE
DDTA144GE
DDTA115GE
Gain-Bandwidth Product*
* Transistor - For Reference Only
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
ΔR₂
f_T
Min
-50
-50
5
⎯
-300
-140
-65
-30
⎯
30
56
68
82
-30
⎯
Typ Max Unit
Test Condition
⎯
⎯
V I_C = -50μA
⎯
⎯
V I_C = -1mA
I_E = -720μA, DDTA114GE
⎯
⎯
V ^{IE = -330μA, DDTA124GE}
I_E = -160μA, DDTA144GE
I_E = -72μA, DDTA115GE
⎯
-0.5 μA V_CB = -50V
-580
⎯
-260
-130
μA V_EB = -4V
-58
⎯ -0.3 V I_C = -10mA, I_B = -0.5mA
⎯
⎯ ⎯ I_C = -5mA, V_CE = -5V
⎯ +30 %
⎯
250
⎯
MHz
V_CE = -10V, I_E = 5mA,
f = 100MHz
DS30320 Rev. 6 - 2
2 of 4
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