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DDC144TU Datasheet, PDF (2/6 Pages) Diodes Incorporated – DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR
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Maximum Ratings:
Sub-Component Device: Discrete NPN Transistor (Q1, Q2) @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (dc)
Symbol
VCBO
VCEO
VEBO
IC(max)
Value
Unit
50
V
50
V
6
V
50
mA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Off Characteristics
Symbol
Min
Typ
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, IO(OFF)
Emitter-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Output Voltage (Transistor is off)
Input Voltage (load is off)
Output Current (leakage same as ICEO)
On Characteristics*
ICBO
⎯
ICEO
⎯
IEBO
⎯
V(BR)CBO
50
V(BR)CEO
50
V(BR)EBO
6
VOH
4.6
VI(OFF)
⎯
IO(OFF)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4.45
0.6
⎯
⎯
0.03
Collector-Emitter Saturation Voltage
⎯
0.075
VCE(SAT)
⎯
0.05
⎯
0.2
150
400
150
400
DC Current Gain
hFE
150
350
150
300
50
110
Output Voltage (equivalent to VCE(SAT) or VO(on))
VOL
⎯
0.2
Input Voltage
VI(ON)
1.5
0.95
Input Current
Ii
⎯
19.2
Base-Emitter Turn-on Voltage
VBE(ON)
⎯
⎯
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
⎯
Input Resistor +/- 30% (Base)
R1
⎯
47
Small Signal Characteristics
Transition Frequency (gain-bandwidth product)
fT
Collector Capacitance, (Ccbo-Output Capacitance)
CC
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
⎯
250
⎯
⎯
Max
100
500
500
⎯
⎯
⎯
⎯
0.4
850
0.1
0.1
0.1
0.3
⎯
⎯
⎯
⎯
⎯
0.25
⎯
28
1.2
1.6
⎯
⎯
5
Unit
nA
nA
nA
V
V
V
V
⎯
nA
V
V
V
V
⎯
⎯
⎯
⎯
⎯
Vdc
Vdc
mA
V
V
KΩ
MHz
pF
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 5V, IC = 0
IC = 50uA, IE = 0
IC = 1 mA, IBB = 0
IE = 50uA, IC = 0
VCC = 5V, VBB = 0.05V, RL = 1KΩ
VCE = 5V, IC = 100uA
VCC = 50V, VI = 0V
IC = 2.5 mA, IBB = 0.25 mA
IC = 10mA, IBB = 0.5mA
IC = 10mA, IBB = 1mA
IC = 50mA, IB=B 5mA
VCE = 5V, IC = 1 mA
VCE = 5V, IC = 10 mA
VCE = 5V, IC = 25 mA
VCE = 5V, IC = 50 mA
VCE = 5V, IC = 100 mA
VCC = 5V, VBB = 2.5V, RL=10KΩ
VO= 0.3V, IC= 2mA
VI = 5V
VCE = 5V, IC = 2mA
IC = 200uA, IBB = 20uA
⎯
VCE = 10V, IE = 5mA, f =100MHz
VCB = 10V, IE = 0, f = 1MHz
DS30767 Rev. 6 - 2
2 of 6
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