DDC144NS Datasheet, PDF (2/5 Pages) Diodes Incorporated – 100mA PRE-BIASED TRANSISTOR ARRAY USING DUAL NPN TRANSISTOR

Electrical Characteristics:
Pre-Biased NPN Transistor ^{@ TA = 25°C unless otherwise specified}
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product
Symbol
Min
Typ
Max
VI(off)
0.5
1.1
¾
V_I(on)
¾
1.5
3
V_O(on)
¾
0.1
0.3
II
¾
¾
0.18
IO(off)
¾
¾
0.5
GI
100
¾
¾
D R1
-30
¾
+30
R2/R1
-20
¾
+20
fT
¾
250
¾
Unit
V
V
V
mA
uA
¾
%
%
MHz
Test Condition
V_cc = 5V, I_O = 100uA
V_O = 0.3V, I_O = 2mA
I_O/I_I = 10mA/0.5mA
VI = 5V
Vcc = 50V, VI = 0V
VO = 5V, IO = 5mA
¾
¾
V_CE = 10V, I_E = 5mA, f = 100 MHz
Typical Characteristics of NPN Transistor (@Tamb = 25°C unless otherwise specified)
250
0.08
200
150
100
0.07
0.06
0.05
0.04
0.03
I_b = 0.45mA
I_b = 0.4mA
I_b = 0.35mA
I_b = 0.3mA
I_b = 0.25mA
50
0
-50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 3 Derating Curve
0.02
0.01
0
I_b = 0.15mA
I_b = 0.1mA
I_b = 0.2mA
I_b = 0.05mA
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 4 V_CE vs I_C
450
400
350
300
250
200
V_CE = 5V
o
T_A = 150 C
o
T_A = 125 C
o
T_A = 85 C
o
T_A = 25 C
150
100
50
0
0.1
o
T_A = -55 C
1
10
100
I_C COLLECTOR CURRENT (mA)
Fig. 5 DC Current Gain
1000
450
400
350
300
250
200
V_CE = 10V
o
T_A = 150 C
o
T_A = 125 C
o
T_A = 85 C
o
T_A = 25 C
150
100
o
T_A = -55 C
50
0
0.1
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Fig. 6 DC Current Gain
DS30747 Rev. 4 - 2
2 of 5
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DDC144NS