DDAXXXXU Datasheet, PDF (2/2 Pages) Diodes Incorporated – PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic (DDA143TU & DDA114TU only) Symbol Min Typ Max
Collector-Base Breakdown Voltage
BVCBO -50 ¾
¾
Collector-Emitter Breakdown Voltage
BV_CEO -50 ¾
¾
Emitter-Base Breakdown Voltage
BV_EBO
-5
¾
¾
Collector Cutoff Current
I_CBO
¾ ¾ -0.5
Emitter Cutoff Current
I_EBO
¾ ¾ -0.5
Collector-Emitter Saturation Voltage
V_CE(sat)
¾
¾
-0.3
DC Current Transfer Ratio
Gain-Bandwidth Product*
h_FE
100 250 600
f_T
¾ 250 ¾
Unit
V
V
V
mA
mA
V
¾
MHz
Test Condition
I_C = -50mA
I_C = -1mA
I_E = -50mA
VCB = -50V
VEB = -4V
IC/IB = -2.5mA / -0.25mA
I_C/I_B = -1mA / -0.1mA
DDA143TU
DDA114TU
IC = -1mA, VCE = -5V
VCE = -10V, IE = 5mA, f = 100MHz
Characteristic
Input Voltage
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
Output Voltage
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
Input Current
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
Output Current
DC Current Gain
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
Gain-Bandwidth Product*
* Transistor - For Reference Only
Symbol
Vl(off)
V_l(on)
V_O(on)
I_l
I_O(off)
Gl
f_T
Min Typ Max Unit
Test Condition
-0.5 -1.1
-0.5 -1.1
-0.3
--
¾
V_CC = -5V, I_O = -100mA
-0.5
--
-0.5 -1.1
V
-1.9 -3.0
V_O = -0.3, I_O = -5mA
-1.9 -3.0
V_O = -0.3, I_O = -2mA
¾
-- -1.4
V_O = -0.3, I_O = -1mA
-- -1.1
V_O = -0.3, I_O = -5mA
-1.9 -3.0
V_O = -0.3, I_O = -10mA
IO/Il = -10mA / -0.5mA
I_O/I_l = -10mA / -0.5mA
¾
-0.1 -0.3 V IO/Il = -5mA / -0.25mA
I_O/I_l = -5mA / -0.25mA
I_O/I_l = -10mA / -0.5mA
-0.36
-0.18
¾
¾ -0.88 mA VI = -5V
-3.6
-0.88
¾
¾ -0.5 mA VCC = -50V, VI = -0V
56
VO = -5V, IO = -5mA
68
V_O = -5V, I_O = -5mA
68
¾
¾ ¾ VO = -5V, IO = -10mA
80
V_O = -5V, I_O = -10mA
30
V_O = -5V, I_O = -5mA
¾
250
¾
MHz
VCE = -10V, IE = -5mA,
f = 100MHz
UNDER DEVELOPMENT
DS30346 Rev. 1 - 1
2 of 2
DDA (xxxx) U