D5V0L2B3SO Datasheet, PDF (2/4 Pages) Diodes Incorporated – CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY

Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P_PP
I_PP
V_{ESD_Contact}
V_{ESD_Air}
Value
84
6
±30
±30
D5V0L2B3SO
Unit
Conditions
W
8/20μs, Per in Fig. 1
A
8/20μs, Per in Fig. 1
kV
Standard IEC 61000-4-2
kV
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
P_D
R_θJA
T_J
T_STG
Value
300
417
-65 to +150
-65 to +150
Unit
mW
°C/W
°C
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current (Note 6)
Clamping Voltage (Note 4)
Differential Resistance
Channel Input Capacitance
Symbol
Min
V_RWM
-
V_BR
6
I_R
-
-
-
VCL
-
-
R_DIF
-
C_T
-
Typ
Max
-
5.0
7
8
10
100
7.0
9.0
8.7
10.7
10.5
12.0
11.5
14.0
0.2
-
15
20
Unit
V
V
nA
V
V
V
V
Ω
pF
Test Conditions
-
I_R = 1.0mA
V_RWM = 5V
I_PP = 1A, t_p = 8/20μs
I_PP = 3A, t_p = 8/20μs
I_PP = 5A, t_p = 8/20μs
I_PP = 6A, t_p = 8/20μs
I_R = 1.0A, t_p = 8/20μs
V_IN = 0V, f = 1MHz
(Channel to Pin 3)
Notes:
4. Measured from channel to pin 3; Non-repetitive current pulse per Fig. 1.
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
100
100
75
50
50
25
0
0
20
40
60
t, TIME (μs)
Fig. 1 Typical 8 x 20µs Pulse Waveform
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 2 Pulse Derating Curve
D5V0L2B3SO
Document number: DS35430 Rev. 5 - 2
2 of 4
www.diodes.com
January 2012
© Diodes Incorporated