D5V0L1B2T-7 Datasheet, PDF (2/4 Pages) Diodes Incorporated – LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P_PP
I_PP
V_{ESD_Contact}
V_{ESD_Air}
Value
84
6
±30
±30
D5V0L1B2T
Unit
Conditions
W
8/20μs, per Fig. 2
A
8/20μs, per Fig. 2
kV
IEC 61000-4-2 Standard
kV
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
150
833
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 7)
Clamping Voltage, Positive Transients
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
Symbol
Min
V_RWM
-
I_RM
-
-
V_CL
-
-
-
V_BR
6
R_DIF
-
C_IN
-
Typ
Max
-
5
10
100
7.0
9.0
8.7
10.7
10.5
12.0
11.5
14.0
7
8
0.2
-
15
20
Unit
V
nA
V
V
Ω
pF
Test Conditions
-
V_RWM = 5V
I_PP = 1A, tp = 8/20μS
I_PP = 3A, tp = 8/20μS
I_PP = 5A, tp = 8/20μS
I_PP = 6A, tp = 8/20μS
I_R = 1mA
I_R = 1A, tp = 8/20μS
V_R = 0V, f = 1MHz
Notes:
6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
100
100
75
50
50
25
0
0
0 25 50 75 100 125 150 175 200
0
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
D5V0L1B2T
Document number: DS35597 Rev. 5 - 2
2 of 4
www.diodes.com
20
40
60
t, TIME (μs)
Fig. 2 Pulse Waveform
June 2012
© Diodes Incorporated