D5V0L1B2S9 Datasheet, PDF (2/5 Pages) Diodes Incorporated – LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
PPP
IPP
VESD_Contact
VESD_Air
Value
84
6
±30
±30
D5V0L1B2S9
Unit
Conditions
W
8/20μs, per Figure 1
A
8/20μs, per Figure 1
kV
IEC 61000-4-2 Standard
kV
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
250
500
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Clamping Voltage, Positive Transients
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
Symbol
Min
VRWM
—
IRM
—
—
—
VCL
—
—
VBR
6
RDIF
—
CIN
—
Typ
—
10
7.0
8.7
10.5
11.5
7
0.2
15
Max
5
100
9.0
10.7
12.0
14.0
8
—
20
Unit
V
nA
V
V
Ω
pF
Test Conditions
—
VRWM = 5V
IPP = 1A, tp = 8/20μS
IPP = 3A, tp = 8/20μS
IPP = 5A, tp = 8/20μS
IPP = 6A, tp = 8/20μS
IR = 1mA
IR = 1A, tp = 8/20μS
VR = 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website
at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
100
50
Peak Value I_pp
Half Value I_pp/2
8x20 Waveform
0
as defined by R.E.A.
0
20
40
60
t, TIME (µs)
Figure 1 Pulse Waveform
18
17
f = 1MHz
16
15
14
13
12
11
10
0
1
2
3
4
5
6
V_R, REVERSE VOLTAGE (V)
Figure 2 Typical Total Capacitance vs. Reverse Voltage
D5V0L1B2S9
Document number: DS36458 Rev. 7 - 2
2 of 5
www.diodes.com
September 2014
© Diodes Incorporated