D5V0L1B2LP Datasheet, PDF (2/4 Pages) Diodes Incorporated – LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

D5V0L1B2LP
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P_PP
I_PP
V_{ESD_Contact}
V_{ESD_Air}
Value
84
6
±30
±30
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Unit
Conditions
W
8/20μs, per Fig. 1
A
8/20μs, per Fig. 1
kV
IEC 61000-4-2 Standard
kV
IEC 61000-4-2 Standard
Value
250
500
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 5)
Clamping Voltage, Positive Transients
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
Symbol
Min
V_RWM
-
I_RM
-
-
-
V_CL
-
-
V_BR
6
R_DIF
-
C_IN
-
Typ
Max
-
5
10
100
7.0
9.0
8.7
10.7
10.5
12.0
11.5
14.0
7
8
0.2
-
15
20
Unit
V
nA
V
V
Ω
pF
Test Conditions
-
V_RWM = 5V
I_PP = 1A, t_p = 8/20μS
I_PP = 3A, t_p = 8/20μS
I_PP = 5A, t_p = 8/20μS
I_PP = 6A, t_p = 8/20μS
I_R = 1mA
I_R = 1A, t_p = 8/20μS
V_R = 0V, f = 1MHz
Notes:
4. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
100
50
0
0
20
40
60
t, TIME (μs)
Fig. 1 Pulse Waveform
18
17
f = 1 MHz
16
15
14
13
12
11
10
0
1
2
3
4
5
6
V_R, REVERSE VOLTAGE (V)
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
D5V0L1B2LP
Document number: DS35427 Rev. 9 - 2
2 of 4
www.diodes.com
January 2012
© Diodes Incorporated