D20V0L1B2WS Datasheet, PDF (2/4 Pages) Diodes Incorporated – LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P_PP
I_PP
V_{ESD_Contact}
V_{ESD_Air}
Value
90
3
±30
±30
D20V0L1B2WS
Unit
Conditions
W
8/20µs, Per Figure 2
A
8/20µs, Per Figure 2
kV
Standard IEC 61000-4-2
kV
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Clamping Voltage, Positive Transients
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
Symbol
Min
Typ
Max
Unit
Test Conditions
V_RWM
—
—
20
V
—
I_RM
—
—
100
nA
V_RWM = 20V
V_CL
—
—
—
—
27
30
V
I_PP = 1A, t_p = 8/20μS
V
I_PP = 3A, t_p = 8/20μS
V_BR
21
—
25
V
I_R = 1mA
R_DIF
—
1.8
—
Ω
I_R = 1A, t_p = 8/20μS
C_T
—
10
15
pF
V_R = 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
250
Note 5
200
150
100
50
0
0
40
80
120
160
200
T_A, AMBIENT TEMPERATURE (°C)
Figure 1 Power Derating Curve
100
50
0
0
20
40
60
t, TIME (s)
Figure 2 Pulse Waveform
D20V0L1B2WS
Document number: DS35943 Rev. 3 - 2
2 of 4
www.diodes.com
April 2014
© Diodes Incorporated