D18V0L1B2LP Datasheet, PDF (2/5 Pages) Diodes Incorporated – 18V BIDIRECTIONAL TVS DIODE

D18V0L1B2LP
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
250
500
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Clamping Voltage, Positive Transients
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
Symbol
Min
Typ
Max
Unit
Test Conditions
V_RWM
—
—
18
V
—
I_RM
—
—
100
nA
V_RWM = 18V
—
V_CL
—
27
30
30
34
V
I_PP = 1A, t_p = 8/20μS
V
I_PP = 2A, t_p = 8/20μS
V_BR
21
—
25
V
I_R = 1mA
R_DIF
—
2.2
—
Ω
I_R = 1A, t_p = 8/20μS
C_T
—
7.0
12
pF
V_R = 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
250
225
200
175
150
125
100
75
50
25
0
0
Note 5
25 50 75 100 125 150 175
T_A, AMBIENT TEMPERATURE (°C)
Figure 1 Power Derating Curve
100
75
50
25
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
D18V0L1B2LP
Document number: DS36461 Rev. 1 - 2
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated