D12V0M1U2S9 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 12V UNIDIRECTIONAL TVS DIODE

Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
R_θJA
TJ, TSTG
D12V0M1U2S9
Value
250
500
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Clamping Voltage, IEC 61000-4-5
Breakdown Voltage
Channel Input Capacitance
Symbol
Min
Typ
Max
Unit
Test Conditions
VRWM
—
IRM
—
—
VCL
—
—
12
V
—
1
100
nA
VRWM = 12V
—
20
V
IPP = 1A, tp = 8/20μS
—
25
IPP = 4A, tp = 8/20μS
VBR
13
—
—
V
IR = 1mA
CT
—
20
26
pF
VR = 0V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
250
225
200
175
150
125
100
75
50
25
0
0
Note 5
25 50 75 100 125 150 175
T_A, AMBIENT TEMPERATURE (°C)
Figure 1 Power Derating Curve
100
75
50
25
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
D12V0M1U2S9
Document number: DS37088 Rev. 1 - 2
2 of 5
www.diodes.com
August 2014
© Diodes Incorporated