CTA2N1P_2 Datasheet, PDF (2/6 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY

Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol Min
V_(BR)CBO
60
V_(BR)CEO
40
V_(BR)EBO 6.0
I_CEX
⎯
I_BL
⎯
20
40
h_FE
80
100
40
V_CE(SAT)
V_BE(SAT)
⎯
0.75
⎯
C_cb
⎯
C_eb
⎯
h_ie
1.0
h_re
0.1
h_fe
40
h_oe
1.0
f_T
250
t_d
⎯
t_r
⎯
t_s
⎯
t_f
⎯
Max
Unit
Test Condition
⎯
V I_C = 100μA, I_E = 0
⎯
V I_C = 1.0mA, I_B = 0
⎯
V I_E = 100μA, I_C = 0
100
nA V_CE = 35V, V_EB(OFF) = 0.4V
100
nA V_CE = 35V, V_EB(OFF) = 0.4V
⎯
⎯
⎯
300
⎯
0.40
0.75
0.95
1.2
I_C = 100µA, V_CE = 1.0V
I_C = 1.0mA, V_CE = 1.0V
⎯ I_C = 10mA, V_CE = 1.0V
I_C = 150mA, V_CE = 1.0V
I_C = 500mA, V_CE = 2.0V
V ^{IC = 150mA, IB = 15mA}
I_C = 500mA, I_B = 50mA
V ^{IC = 150mA, IB = 15mA}
I_C = 500mA, I_B = 50mA
6.5
pF V_CB = 5.0V, f = 1.0MHz, I_E = 0
30
pF V_EB = 0.5V, f = 1.0MHz, I_C = 0
15
kΩ
8.0
x 10^-4 _{VCE = 10V, IC = 1.0mA,}
500
⎯ ^{f = 1.0kHz}
30
μS
⎯
MHz ^{VCE = 10V, IC = 20mA,}
f = 100MHz
15
ns _{VCC = 30V, IC = 150mA,}
20
ns ^VBE(off) ^{= 2.0V, I}B1 ^{= 15mA}
225
ns _{VCC = 30V, IC = 150mA,}
30
ns ^IB1 ^{= I}B2 ^{= 15mA}
Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Symbol Min Typ Max Unit
Test Condition
BV_DSS -50 ⎯ ⎯ V V_GS = 0V, I_D = -250µA
⎯ ⎯ _-15 µA VDS = -50V, VGS = 0V, TJ = 25°C
I_DSS
⎯ ⎯ -60 µA V_DS = -50V, V_GS = 0V, T_J = 125°C
⎯ ⎯ ^{-100 nA} V_DS = -25V, V_GS = 0V, T_J = 25°C
I_GSS
⎯ ⎯ ±10 nA V_GS = ±20V, V_DS = 0V
V_GS(th) -0.8 ⎯ -2.0
R_{DS (ON)} ⎯ ⎯ 10
g_FS
.05 ⎯ ⎯
V V_DS = V_GS, I_D = -1mA
Ω V_GS = -5V, I_D = 0.100A
S V_DS = -25V, I_D = 0.1A
C_iss
C_oss
C_rss
⎯ ⎯ 45 pF
⎯
⎯
25
pF
V_DS = -25V, V_GS = 0V
f = 1.0MHz
⎯ ⎯ 12 pF
t_D(ON)
t_D(OFF)
⎯ 10 ⎯
⎯ 18 ⎯
ns _{VDD = -30V, ID = -0.27A,}
ns ^RGEN ^{= 50Ω, V}GS ^{= -10V}
DS30295 Rev. 7 - 2
2 of 6
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