BSS8402DW Datasheet, PDF (2/5 Pages) Diodes Incorporated – COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics N-CHANNEL - Q₁, 2N7002 Section @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS
60
@ T_C = 25°C
@ T_C = 125°C
IDSS
¾
I_GSS
¾
70
¾
V VGS = 0V, ID = 10mA
¾
1.0
500
µA VDS = 60V, VGS = 0V
¾
±10
nA VGS = ±20V, VDS = 0V
V_GS(th) 1.0
@ T_j = 25°C
@ T_j = 125°C
R_{DS (ON)}
¾
I_D(ON)
0.5
g_FS
80
¾
2.5
V VDS = VGS, ID =-250mA
3.2 7.5
4.4 13.5
W
V_GS = 5.0V, I_D = 0.05A
VGS = 10V, ID = 0.5A
1.0
¾
A VGS = 10V, VDS = 7.5V
¾
¾
mS VDS =10V, ID = 0.2A
C_iss
¾
22
50
pF
Coss
¾
11
25
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
Crss
¾
2.0 5.0
pF
t_D(ON)
¾
7.0
20
ns VDD = 30V, ID = 0.2A,
t_D(OFF)
¾
11
20
RL = 150W, VGEN = 10V,
ns _{RGEN = 25W}
Electrical Characteristics P-CHANNEL - Q₂, BSS84 Section ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS -50
¾
I_DSS
¾
¾
I_GSS
¾
¾
¾
V VGS = 0V, ID = -250µA
¾
-15 µA VDS = -50V, VGS = 0V, TJ = 25°C
¾
-60 µA VDS = -50V, VGS = 0V, TJ = 125°C
¾
-100 nA V_DS = -25V, V_GS = 0V, T_J = 25°C
¾
±10 nA VGS = ±20V, VDS = 0V
V_GS(th) -0.8
¾
-2.0 V VDS = VGS, ID = -1mA
R_{DS (ON)} ¾
¾
10
W VGS = -5V, ID = 0.100A
g_FS
.05
¾
¾
S VDS = -25V, ID = 0.1A
Ciss
¾
¾
45 pF
C_oss
¾
¾
25
pF
V_DS = -25V, V_GS = 0V
f = 1.0MHz
C_rss
¾
¾
12 pF
t_D(ON)
¾
10
¾
ns _{VDD = -30V, ID = -0.27A,}
t_D(OFF)
¾
18
¾
ns ^{RGEN = 50W, VGS = -10V}
Note: 2. Short duration test pulse used to minimize self-heating effect.
DS30380 Rev. 4 - 2
2 of 5
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BSS8402DW