BS250F_15 Datasheet, PDF (2/3 Pages) Diodes Incorporated – SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

BS250F
TYPICAL CHARACTERISTICS
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
VGS=-20V
-16V
-14V
-12V
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-10
-20
-30
-40
-50
VDS - Drain Source Voltage (Volts)
Output Characteristics
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
VGS=
-16V
-14V
-12V
-10V
-9V
-8V
-7V
-6V
-5V
-4.5V
-10
-10
-8
ID=
-6
-400mA
-4
-2
-200mA
0
-100mA
0
-2
-4
-6
-8
-10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
VDS=-10V
-2
-4
-6
-8
-10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
100
VGS=-5V
-6V
-7V
-10V
10
-15V
-20V
1
-10
-100
-1000
ID-Drain Current (mA)
On-resistance vs Drain Current
2.6
2.4
VGS=-10V
2.2
ID=0.37A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Drain-Source ^{Resistance RDS(on)}
Gate _{Threshold Voltage}
VGS=VDS
ID=-1mA
VGS(TH)
0.6
-40 -20 0 20 40 60 80 100 120 140 160 180
Junction Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
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