BCV47_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 60V NPN DARLINGTON TRANSISTOR IN SOT23

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
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Diodes Incorporated
BCV47
Value
Unit
80
V
60
V
10
V
500
mA
800
mA
100
mA
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
P_D
R_θJA
R_θJL
T_J,T_STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
Notes:
6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is mounted on 15mm x 15mm FR4 PCB.
8. Thermal resistance from junction to solder-point (at the end of the leads).
0.4
0.3
0.2
0.1
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
10
Single Pulse. T =25°C
amb
400
350
300
250
D=0.5
200
150
100 ^D=0.2
D=0.1
Single Pulse
50
D=0.05
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
1
0.1
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
BCV47
Document number: DS33001 Rev. 4 - 2
2 of 5
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December 2012
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