BC857BS Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP general purpose double transistor

Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
DC Current Gain (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 1)
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
Collector Cutoff Current
Emitter Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Symbol
h_FE
R_qJA
VCE(SAT)
V_BE(SAT)
V_BE
I_CBO
ICBO
I_EBO
f_T
C_CBO
CEBO
Min
220
—
—
—
-580
—
—
100
—
—
Typ
—
—
—
—
-700
-665
—
—
—
—
—
11
Max
475
625
-100
-400
—
-750
-15
-4.0
-100
—
3
—
Unit
—
°C/W
mV
mV
mV
nA
µA
nA
MHz
pF
pF
Test Condition
V_CE = -5.0V, I_C = -2.0mA
Note 1
I_C = -10mA, I_B = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
V_CE = -5.0V, I_C = -2.0mA
VCB = -30V, IE = 0
V_CB = -30V, T_j = 150°C
V_EB = -5.0V, I_C = 0
V_CE = -5.0V, I_C = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
V_EB = -0.5V, f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration test pulse used to minimize self-heating effect.
250
200
150
(see Note 1)
1000
T_A = 150°C
100
T_A = 25°C
T_A = -50°C
V_CE = -5V
100
10
50
0
0
100
200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
0.5
I_C / I_B = 20
0.4
1
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
T_A = 25°C
0.3
0.2
T_A = 150°C
0.1
T_A = 25°C
100
V_CE = -5V
0
0.1
T_A = -50°C
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
10
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
DS30373 Rev. 5 - 2
2 of 3
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BC857BS