BC857BLP Datasheet, PDF (2/4 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
hFE
Min
-50
-45
-5
220
V_CE(SAT) —
VBE(SAT)
—
—
V_BE(ON)
-600
—
ICBO
—
—
f_T
100
C_CBO
—
Typ
—
—
—
260
90
250
-700
-850
-670
-710
—
—
—
3.0
Note:
3. Short duration pulse test used to minimize self-heating effect.
Max
—
—
—
475
-300
-650
—
—
-750
-820
-15
-4.0
—
—
Unit
V
V
V
—
mV
mV
mV
nA
µA
MHz
pF
Test Condition
I_C = 10µA, I_B = 0
I_C = 10mA, I_B = 0
I_E = 1µA, I_C = 0
V_CE = -5.0V, I_C = -2.0mA
IC = -10mA, IB = -0.5mA
I_C = -100mA, I_B = -5.0mA
I_C = -10mA, I_B = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
V_CE = -5.0V, I_C = -10mA
V_CB = -30V
VCB = -30V, TA = 150°C
V_CE = -5.0V, I_C = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
300
250
200
150
100
50
0
0
25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
350
Ic/Ib=20
300
250
200
T_A = 125ºC
150
100
T_A = 150ºC
T_A = 85ºC
T_A = -55ºC
50
0
1
T_A = 25ºC
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation
Voltage vs. Collector Current
DS30526 Rev. 7 - 2
2 of 4
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BC857BLP