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BC856A_2 Datasheet, PDF (2/4 Pages) Diodes Incorporated – PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage (Note 5)
BC856
BC857
BC858
Collector-Emitter Breakdown Voltage (Note 5)
BC856
BC857
BC858
Emitter-Base Breakdown Voltage (Note 5)
H-Parameters
Small Signal Current Gain
Input Impedance
Output Admittance
Reverse Voltage Transfer Ratio
DC Current Gain (Note 5)
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Collector-Emitter Saturation Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Voltage (Note 5)
Collector-Cutoff Current (Note 5)
BC856
BC857
BC858
Symbol Min
Typ
Max
-80
—
—
V(BR)CBO
-50
—
—
-30
—
—
-65
—
—
V(BR)CEO
-45
—
—
-30
—
—
V(BR)EBO
-5
—
—
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
ICES
ICES
ICES
ICBO
ICBO
—
—
—
—
—
—
—
—
—
—
—
—
125
220
420
—
—
—
-600
—
—
—
—
—
—
200
330
600
2.7
4.5
8.7
18
30
60
1.5x10-4
2x10-4
3x10-4
180
290
520
-75
-250
-700
-850
-650
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
250
475
800
-300
-650
—
-750
-820
-15
-15
-15
-15
-4.0
Gain Bandwidth Product
fT
100
200
—
Collector-Base Capacitance
CCBO
—
3
—
Noise Figure
NF
—
2
10
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Unit
Test Condition
V IC = 10μA, IB = 0
V IC = 10mA, IB = 0
V IE = 1μA, IC = 0
—
—
—
kΩ
kΩ VCE = -5.0V, IC = -2.0mA,
kΩ f = 1.0kHz
µS
µS
µS
—
—
—
— VCE = -5.0V, IC = -2.0mA
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
mV
nA
nA
nA
nA
µA
MHz
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
VCE = -80V
VCE = -50V
VCE = -30V
VCB = -30V
VCB = -30V, TA = 150°C
VCE = -5.0V, IC = -10mA,
f = 100MHz
pF VCB = -10V, f = 1.0MHz
dB
VCE = -5.0V, IC = 200µA,
RS = 2kΩ, f = 1kHz, Δf = 200Hz
DS11207 Rev. 19 - 2
2 of 4
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BC856A-BC858C
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