English
Language : 

BC856AW_15 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – Elektronische Bauelemente
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Emitter Current
BC856
BC857
BC858
BC856
BC857
BC858
Symbol
VCBO
VCEO
VEBO
IC
ICM
IEM
BC856AW-BC858CW
Value
Unit
-80
-50
V
-30
-65
-45
V
-30
-5.0
V
-100
mA
-200
mA
-200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 6)
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-65 to +150
Unit
mW
C/W
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
DC Current Gain (Note 7)
Current Gain Group
Collector Cutoff Current
BC856
BC857
BC858
BC856
BC857
BC858
A
B
C
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Output Capacitance
Transition Frequency
Noise Figure
Symbol
BVCBO
BVCEO
BVEBO
hFE
ICBO
VCE(sat)
VBE(on)
VBE(sat)
Cobo
fT
Min
-80
-50
-30
-65
-45
-30
-5
125
220
420
-
-
-600
-
-
-
100
NF
-
Typ
-
-
-
180
290
520
-
-75
-250
-650
-
-700
-850
3
200
-
Max Unit
Test Condition
-
V IC = -100nA
-
-
250
475
800
-15
-4
-300
-650
-750
-820
-
-950
4.5
-
10
V IC = -10mA
V IE = -100nA
- VCE = -5.0V, IC = -2.0mA
nA
µA
mV
mV
mV
pF
MHz
dB
VCB = -30V
VCB = -30V, TA = +150°C
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -2mA, VCE = -5V
IC = -10mA, VCE = -5V
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5mA
VCB = -10V, f = 1.0MHz
VCE = -5V, IC = -10mA,
f = 100MHz
VCE = -5V, IC = -200µA
RS = 2kΩ, f = 1kHz
∆f = 200Hz
Notes:
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
BC856AW – BC858CW
Document Number: DS30251 Rev. 10 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated