BC847BLP4_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
BC847BLP4
Value
Unit
50
V
45
V
6.0
V
100
mA
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Thermal Resistance, Junction to Lead
(Note 7)
Operating and Storage and Temperature Range
Symbol
PD
R_JA
R_JL
TJ, TSTG
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
400
1000
310
120
120
-55 to +150
Unit
mW
C/W
°C/W
°C
Value
4,000
200
Unit JEDEC Class
V
3A
V
B
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Voltage (Note 9)
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Symbol Min Typ Max Unit Test Condition
BVCBO
50
—
—
V I_C = 10µA, I_B = 0
BVCEO
45
—
—
V I_C = 10mA, I_B = 0
BVEBO
6
—
—
V I_E = 1µA, I_C = 0
hFE
200
350
450
— V_CE = 5.0V, I_C = 2.0mA
VCE(sat)
—
80
200
250
600
mV ^{IC = 10mA, IB = 0.5mA}
IC = 100mA, IB = 5.0mA
VBE(sat)
—
—
700
900
—
—
mV ^{IC = 10mA, IB = 0.5mA}
IC = 100mA, IB = 5.0mA
VBE(on)
580
—
640
725
700
770
mV ^{VCE = 5.0V, IC = 2.0mA}
VCE = 5.0V, IC = 10mA
ICBO
—
—
—
—
15
nA VCB = 30V
5.0
µA _{VCB = 30V, TA = +150°C}
fT
100
—
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
CCBO
—
3.0
—
pF V_CB = 10V, f = 1.0MHz
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BC847BLP4
Document number: DS31297 Rev. 7 - 2
2 of 5
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May 2015
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