BC817-16Q Datasheet, PDF (2/7 Pages) Diodes Incorporated – 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
BC817-16Q /-40Q
Value
Unit
50
V
45
V
5.0
V
0.5
A
1.0
A
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
310
350
403
357
350
-65 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Symbol
ESD HBM
Value
8,000
Unit JEDEC Class
V
3B
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
6. For a device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except mounted on 15mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BC817-16Q /-40Q
Document number: DS38331 Rev. 2 - 2
2 of 7
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March 2016
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