BAS70LP_15 Datasheet, PDF (2/4 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODEnull

BAS70LP
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
70
V
V_R
Forward Continuous Current (Note 4)
I_FM
70
mA
Non-Repetitive Peak Forward Surge Current @ t_p < 1.0s
I_FSM
800
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
430
295
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Leakage Current (Note 5)
Total Capacitance
Reverse Recovery Time
Symbol Min
Typ
Max
Unit
Test Condition
V_(BR)R
70
-
-
V I_R = 10μA
-
V_F
-
-
-
0.42
I_F = 1.0mA, T_J= 25*C
-
0.75
V I_F = 10mA, T_J = 25*C
-
0.96
I_F = 15mA, T_J = 25*C
I_R
-
-
-
-
0.1
10
μA ^{VR = 50V, TJ = 25*C}
V_R = 70V, T_J = 25*C
C_T
-
1
-
pF V_R = 0V, f = 1.0MHz
t_rr
-
1.6
-
ns
I_F = I_R = 10mA to IR = 1.0mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
4. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.2
0.3
0.4
0.5
I_F(AV), AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
100
10 ^TA ^{= 150°C}
T_A = 125°C
1
T_A = 85°C
T_A = 25°C
0.1
0.01
0
0.5
1.0
1.5
2.0
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
BAS70LP
Document number: DS35105 Rev. 2 - 2
2 of 4
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March 2011
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