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| BAS40_15 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Schottky Barrier Diodes | |||
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Marking Information
BAS40/ -04/ -05/ -06
Shanghai A/T Site
Chengdu A/T Site
xxx = Product Type Marking Code
K43 = BAS40
K44 = BAS40-04
K45 = BAS40-05
K46 = BAS40-06
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YÌ
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or YÌ
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year 1999
Code
K
2000
L
2001
M
Month
Jan
Feb
Code
1
2
2002
N
Mar
3
2003 2004 2005
P
R
S
Apr
May
4
5
2006 2007 2008
T
U
V
Jun
Jul
6
7
2009 2010 2011
W
X
Y
Aug
Sep
8
9
2012
Z
Oct
O
2013 2014 2015
A
B
C
Nov
Dec
N
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltageï
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 6)
Forward Surge Current (Note 6)
@ t < 1.0s
Symbol
VRRM
VRWM
VR
IFM
IFSM
Value
40
200
600
Unit
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Operating Temperature Range
Storage Temperature Range
Symbol
PD
Rï±JA
TJ
TSTG
Value
350
357
-55 to +125
-65 to +150
Unit
mW
°C/W
°C
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Reverse Leakage Current (Note 7)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ
V(BR)R
40
ï¾ï
VF
ï¾ï ï¾ï
IR
ï¾ï 20
CT
ï¾ï 4.0
trr
ï¾ï ï¾ï
Max
ï¾ï
380
1000
200
5.0
5.0
Unit
Test Condition
V IR = 10µA
mV
tp < 300µs, IF = 1.0mA ï
tp < 300µs, IF = 40mA
nA tp < 300µs, VR = 30V
pF VR = 0V, f =1.0MHz
ns
IF = IR = 10mA to IR = 1.0mA,
RL = 100â¦
Notes:
6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BAS40/ -04/ -05/ -06
Document number: DS11006 Rev. 25 - 2
2 of 5
www.diodes.com
December 2013
© Diodes Incorporated
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