BAS40W_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Schottky Barrier Diodes

Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 6)
Non-Repetitive Peak Forward Surge Current
@ t = 1.0s
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_FSM
BAS40W /-04 /-05 /-06
Value
Unit
40
V
28
V
200
mA
600
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance Junction to Ambient Air (Note 6)
Operating Temperature Range
Storage Temperature Range
Symbol
P_D
R_θJA
T_J
T_STG
Value
200
625
-55 to +125
-65 to +150
Unit
mW
°C/W
°C
°C
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Symbol
Min
V_(BR)R
40
Forward Voltage
V_F
⎯
Leakage Current (Note 7)
Total Capacitance
I_R
⎯
C_T
⎯
Reverse Recovery Time
t_rr
⎯
Max
⎯
380
1000
200
5.0
5.0
Notes:
6. Device mounted on FR4 PC board with recommended pad layout, per http://www.diodes.com
7. Short duration pulse test used to minimize self-heating effect.
Unit
V
mV
mV
nA
pF
ns
Test Condition
I_R = 10μA
I_F = 1.0mA, t_p < 300μs
I_F = 40mA, t_p < 300μs
V_R = 30V
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
1
10,000
0.1
0.01
0.001
1,000
100
10
1
0.0001
0
0.2
0.4
0.6
0.8
1.0
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
0.1
0
10
20
30
40
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
BAS40W /-04 /-05 /-06
Document number: DS30114 Rev. 15 - 2
2 of 4
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February 2014
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