2N3906 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP switching transistor

Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
DC Current Gain
Symbol Min
Max
50
¾
70
¾
h_FE
100
300
60
¾
30
¾
Collector Saturation Voltage
V_CE(SAT)
¾
0.25
0.40
Base Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
V_BE(SAT)
¾
I_CEX
¾
IBL
¾
V_(BR)CBO
40
V_(BR)CEO
40
V_(BR)EBO
5.0
f_T
250
C_CBO
¾
CEBO
¾
NF
¾
0.85
0.95
50
50
¾
¾
¾
¾
4.5
10
5.0
Delay Time
Rise Time
Storage Time
Fall Time
t_d
¾
35
t_r
¾
35
t_s
¾
225
t_f
¾
75
Unit
¾
V
V
nA
nA
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
Notes: 1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature.
2. Pulse test: Pulse width£ 300ms, duty cycle £ 2%.
Test Condition
-VCE = 1.0V,- IC = 0.1mA
-V_CE = 1.0V,- I_C = 1.0mA
-V_CE = 1.0V,- I_C = 10mA
-V_CE = 1.0V,- I_C = 50mA
-V_CE = 1.0V,- I_C = 100mA
(Note 2)
-IC = 10mA,- IB = 1.0mA
-I_C = 50mA,- I_B = 5.0mA
(Note 2)
-I_C = 10mA, -I_B = 1.0mA
-I_C = 50mA, -I_B = 5.0mA
-VEB = 3.0V, -VCE = 30V
-VEB = 3.0V, -VCE = 30V
-I_C = 10mA, -I_E = 0
-IC = 1.0mA,- IB = 0 (Note 2)
-IE = 10mA,- IC = 0
-VCE = 20V, -IC = 10mA,
f = 100MHz
-VCB = 5.0V, -IE = 0, f = 100kHz
-VEB = 0.5V, -IC = 0, f =100kHz
-VCE = 5.0V, -IC = 100mA,
R_G = 1.0kW, f = 10 to 15000Hz
-IB1 = 1.0mA, -IC = 10mA,
V_CC = 3.0V, V_BE(off) = 0.5V
-IB1 = 1.0mA,- IC = 10mA,
-V_CC = 3.0V, -V_BE(off) = 0.5V
-IB1 =- IB2 = 1.0mA,
-I_C = 10mA, -V_CC = 3.0V
-IB1 =- IB2 = 1.0mA,
-I_C = 10mA, -V_CC = 3.0V
DS11202 Rev. K-3
2 of 3
2N3906